| PART |
Description |
Maker |
| W971GG8KB-25-TR |
16M 8 BANKS 8 BIT DDR2 SDRAM
|
Winbond
|
| W971GG8JB-12 W971GG8JB-3 W971GG8JB25A W971GG8JB-25 |
16M x 8 BANKS x 8 BIT DDR2 SDRAM
|
Winbond
|
| W9751G8JB |
16M X 4 BANKS X 8 BIT DDR2 SDRAM
|
Winbond
|
| W632GG6KB-15 W632GG6KB-11 |
16M X 8 BANKS X 16 BIT DDR3 SDRAM
16M X 8 BANKS X 16 BIT DDR3 SDRAM
|
Winbond
|
| W972GG6JB W972GG6JB-25 |
16M ?8 BANKS ?16 BIT DDR2 SDRAM
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPF |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 32M X 32 SYNCHRONOUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks 1千兆位SDRAM2梅格× 32位4，银
|
http://
Maxwell Technologies, Inc
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYS72V32220GU-75-C2 HYS64V32220GU-75-C2 HYS72V1630 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
|
Infineon Technologies AG
|
| W9864G6 W9864G6DB W9864G6DB-7 |
1M x 4 BANKS x 16 BITS SDRAM
1M x 4 BANKS x 16 BITS SDRAM
From old datasheet system
BGA SDRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| IBM13N16644JCA-260T IBM13N16734JCA-260T IBM13N1664 |
x72 SDRAM Module
x64 SDRAM Module X64的内存模
16M x 64 One-Bank Unbuffered SDRAM Module(16M x 64 1组不带缓冲同步动态RAM模块6M x 64高速存储器阵列结构 1,600 × 64单银行无缓冲内存模组6x 64 1组不带缓冲同步动态内存模块（1,600 × 64高速存储器阵列结构））
|
DB Lectro, Inc.
International Business Machines, Corp.
|
| W982516AH |
4m x 8 bit x 16 Banks SDRAM
|
Winbond
|
