| PART |
Description |
Maker |
| 2SA1365 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| ISC4356AS1 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| 2SC6053 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| INC5004AC1 |
FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Cor...
|
| INC1001AC1 |
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corpora...
|
| 2SJ304 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ438 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| 2SJ380 |
P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) P通道马鞍山型（高速，大电流开关，继电器驱动，DC - DC变换器和电机驱动应用
P CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING/ RELAY DRIVE/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| BC817 |
NPN Silicon Transistor (High current application Switching application)
|
AUK corp
|
| BCP68-10 BCP68-16 Q62702-C2126 Q62702-C2128 Q62702 |
From old datasheet system
NPN Silicon AF Transistor (For general AF application High collector current High current gain)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
