| PART |
Description |
Maker |
| 2SC343707 2SC3437 |
Silicon NPN Epitaxial Type (PCT process) Ultra High Speed Switching Applications
|
Toshiba Semiconductor
|
| 2SC5383 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE(Ultra super mini type)
|
Isahaya Electronics Corporation
|
| 2SC5009 2SC5009-T1 2SC5009-T1-T2 |
NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2 |
NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
|
NEC[NEC]
NEC Corp.
|
| HN1D02FE |
Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
Toshiba Semiconductor
|
| 1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications
|
TOSHIBA
|
| 1SS337 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| 1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN1D02FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN1D01FU |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN1D01F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
| HN1D03F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application
|
TOSHIBA
|
