| PART |
Description |
Maker |
| AT27BV020-90VI AT27BV020-90VC AT27BV020-90TI AT27B |
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PDSO32
High Speed CMOS Logic Octal D-Type Flip-Flops with Data Enable 20-PDIP -55 to 125 256K X 8 OTPROM, 90 ns, PQCC32
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 90 ns, PBGA42
High Speed CMOS Logic Octal Positive-Edge-Triggered D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 OTPROM, 150 ns, PDSO32
2-Megabit 256K x 8 Unregulated Battery-Voltage High Speed OTP EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AT27BV4096 AT27BV4096-12JC AT27BV4096-12JI AT27BV4 |
High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-PDIP -55 to 125
High Speed CMOS Logic 4-Bit by 16-Word FIFO Register 16-SOIC -55 to 125
4 Megabit 256K x 16 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| P4C1041-10JC P4C1041-10TC P4C1041-15JC |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| P3C1041-10TI P3C1041-10TC P3C1041-10JC P3C1041-10J |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Pyramid Semiconductor, Corp.
|
| LY61L25616GL-10LL LY61L25616GL-12LLET LY61L25616GL |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY6125616 LY6125616E LY6125616I LY6125616LL LY6125 |
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| IS61WV25616ALL IS61WV25616ALS |
256K X 16 High Speed Asynchronous CMOS Static Ram
|
ISSI
|
| IS64WV1288EEBLL-10KLA1 IS64WV1288EEBLL-10KLA3 IS64 |
256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC
|
Integrated Silicon Solution, Inc
|
| IS61LV25616L-15T IS61LV25616L IS61LV25616L-10LQI I |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY
|
ISSI[Integrated Silicon Solution, Inc]
|
| KM641003CJ-10 |
256K x 4 Bit (with inverted OE) High-Speed CMOS Static RAM
|
Samsung Electronics
|
