| PART |
Description |
Maker |
| SST27SF512 SST27VF512 27XF512 |
512 Kilobit (64K x 8) SuperFlash MTP
From old datasheet system
|
SST
|
| AM27C512-120DC |
512 Kilobit (64 K x 8-Bit) CMOS EPROM
|
AMD
|
| SST29EE512 29EE512B |
5.0V-only 512 Kilobit Page Mode EEPROM
From old datasheet system
|
SST
|
| SST29EE512-70-4I-EHE SST29EE512-70-4C-EHE SST29EE5 |
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Write EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
http://
Silicon Storage Technology, Inc.
|
| CAT28C512HI-12 CAT28C512GI-12 CAT28C512GI12 CAT28C |
512 kb CMOS Parallel EEPROM 64K X 8 EEPROM 5V, 120 ns, PDSO32
512 kb CMOS Parallel EEPROM 64K X 8 EEPROM 5V, 120 ns, PQCC32
64K X 8 EEPROM 5V, 150 ns, PDSO32
|
ON Semiconductor
|
| SST29EE512704IPHE SST29EE512 SST29EE512-70-4C-EH S |
512 Kbit (64K x8) Page-Write EEPROM
|
SST[Silicon Storage Technology, Inc]
|
| M27512 M27512-3F6 27512 M27256-20F6 M27256-25F6 M2 |
NMOS 512 Kbit (64Kb x 8) UV EPROM, 250ns
NND - NMOS 512 KBIT (64KB X8) UV EPROM
NMOS 512K 64K x 8 UV EPROM NMOS管为512k 64KX8的紫外线存储
NMOS 512K 64K x 8 UV EPROM
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| EN29LV512 EN29LV512-45RJCP EN29LV512-70SI EN29LV51 |
512 Kbit (64K x 8-bit ) Uniform Sector, CMOS 3.0 Volt-only Flash Memory
|
ETC
Eon Silicon Solution Inc.
|
| PM37LV512-70PC PM37LV512 PM37LV512-70JC PM37LV512- |
512 Kbit (64K X 8) Dual-Voltage Multiple-Cycle-Programmable ROM 512千位4K的8）双电压多周期可编程ROM
|
PMC-Sierra, Inc.
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
