PART |
Description |
Maker |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|
2SK2903 2SK2903-01MR |
N-CHANNEL SILICON POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET 50 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI[Fuji Electric] Fuji Electric Holdings Co., Ltd.
|
MP4410 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching 14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
2SJ552 2SJ552L 2SJ552S 2SJ552L/S |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
|
HITACHI[Hitachi Semiconductor]
|
2SK1310A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER
|
TOSHIBA
|
2SK439 2SK439E K439 |
Silicon N Channel MOS FET Silicon N-Channel MOS FET 硅N沟道场效应晶体管 TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 30MA I(D) | SPAK 2SK439
|
Hitachi,Ltd. Sanyo Semicon Device Hitachi Semiconductor
|
UPA1552H |
MOS FIELD EFFECT POWER TRANSISTOR ARRAY (FAST SWITCHING N-CHANNEL SILICON POWER MOS FET ARRAY)
|
NEC
|
RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0346DPA RJK0346DPA-00-J0 |
65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
2SK1310A EA09774 |
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE From old datasheet system RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
|
Toshiba Semiconductor
|