PART |
Description |
Maker |
CR08AS-12 |
Low Power Use Non-Insulated Type
|
Guangdong Kexin Industr...
|
CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
|
CM400HA-28H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CR03AM |
LOW POWER USE NON-INSULATED TYPE/ GLASS PASSIVATION TYPE LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Semiconductor
|
CR05AS |
LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 低功率的用途非绝缘型,平面型钝
|
Mitsubishi Electric, Corp.
|
CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR3AMZ |
HIGH-SPEED SWITCHING THYRISTOR - LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
IRG7PH28UD1PBF IRG7PH28UD1MPBF IRG7PH28UD1PBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE Low switching losses
|
International Rectifier
|
BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem... Mitsubishi Electric Corporation
|
RM150DZ-24 RM150DZ-2H RM150DZ-H RM150DZ-M RM150UZ- |
HIGH POWER GENERAL USE INSULATED TYPE HIGH POWER GENERAL USE INSULATED TYPE 大功率常规使用绝缘型 BATTERY SLA 12V 7AH .250 TERM 大功率常规使用绝缘型 ADAPTOR 0.187 TO 0.250 TERMINAL 大功率常规使用绝缘型 Insert strip for laser printer, lettering field: 62 x 10 mm - ESL 62 X 10 大功率常规使用绝缘型
|
Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Sem...
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