| PART |
Description |
Maker |
| IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3061 ECN3061SPR ECN3061SP ECN3061SPV |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| ECN3064 ECN3064SP ECN3064SPR ECN3064SPV |
HIGH-VOLTAGE MONOLITHIC IC 高压单片集成电路
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| TPD4113K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4113AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| 2EX103K1 |
High Voltage Capacitors Monolithic Ceramic Type
|
Semtech
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology Corporation
|
| A2460 |
Monolithic High Voltage MOSFET and IGBT Driver
|
Alpha Microelectronics
|
| IXBH15N160 IXBH15N140 |
From old datasheet system
High Voltage BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS[IXYS Corporation]
|
