PART |
Description |
Maker |
FMC1819LN-02 |
K-Band Power GaAs Modules
|
Fujitsu Microelectronics
|
FMC2122LN-03 |
K-Band Power GaAs Modules
|
Fujitsu
|
FMC1819C6-02 |
K-Band Power GaAs Modules
|
Fujitsu Microelectronics
|
MGFC39V3742A04 MGFC39V3742A |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET 3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGF0907 MGF0907B |
L /S BAND POWER GaAs FET MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
Mitsubishi Electric Corporation
|
FLM5359-4F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET C-Band Internally Matched FET
|
Eudyna Devices Inc
|
CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC INFINEON[Infineon Technologies AG]
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
MGF0911A 0911A |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
FMC2122P1-02 |
KU K-BRAND POWER GAAS MODULES
|
Fujitsu Microelectronics Fujitsu Media Devices Limited Fujitsu Component Limited.
|
FMC2223P1-02 |
Ku K-Brand Power GaAs Modules
|
Fujitsu Microelectronics FUJITSU[Fujitsu Media Devices Limited] Fujitsu Component Limited.
|