PART |
Description |
Maker |
MC14410 MC14410L MC14410P |
2 of 8 Tone Encoder / CMOS LSI CMOS LSI (LOW-POWER COMPLEMENTARY MOS)
|
Motorola, Inc
|
LC8955 |
CMOS LSI CD-1 Format ADPCM Data Replay LSI
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
LC822973 |
CMOS LSI TV Image Viewer LSI
|
Sanyo Semicon Device
|
LC80101M |
VICS LSI CMOS LSI Special-Purpose Descrambler LSI for Use In VICS Systems.(用于VICS系统的特殊用途密码器LSI)
|
Sanyo Semicon Device Sanyo Electric Co.,Ltd.
|
GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28 x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28 2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL 2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc.
|
MC14409 MC14408 |
(MC14409) CMOS LSI (MC14408 / MC14409) CMOS LSI
|
Motorola
|
AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
LC8903Q |
CMOS LSI
|
Sanyo
|
LC8902Q |
CMOS LSI
|
Sanyo
|
LC7566 |
CMOS LSI
|
Sanyo Semiconductor
|
LC66558A |
CMOS LSI
|
Sanyo
|