Part Number Hot Search : 
11015 030PAAA 00450 20122 HEM073 MAX703 HRWN50W 1A34LC
Product Description
Full Text Search

M6MGT331S4BKT - 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B

M6MGT331S4BKT_395428.PDF Datasheet


 Full text search : 33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B


 Related Part Number
PART Description Maker
MH32V725BST-6 MH32V725BST-5 HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
MH32S64APFB-8 MH32S64APFB-7 2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M5V208AKR M5M5V208AKV D99016 M5M5V208AKR-55LW 2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
From old datasheet system
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
M5M5V216ART-70HI M5M5V216ART-55HI M5M5V216ATP M5M5 Memory>Low Power SRAM
2097152-BIT (131072-WORD BY 16-BIT) CMOS STATIC RAM
Renesas Electronics Corporation
MH32S64APHB-8 MH32S64APHB-7 MH32S64APHB-6 2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM 2147483648位(33554432 -文字4位)同步DRAM
2 /147 /483 /648-BIT (33 /554 /432 - WORD BY 64-BIT)Synchronous DRAM
Mitsubishi Electric, Corp.
HM5216808/5216408C HM5216808CTT-80 1048576-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3) 2097152-word*8-bit*2-bank synchronous dynamic RAM(SSTL-3)
x8 SDRAM x8 SDRAM内存
Hitachi,Ltd.
MSC2323258A MSC2323258A-XXBS4 MSC2323258A-XXDS4 2097152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
2,097,152-Word x 32-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO
DPDT 10A MINI 24VDC 2097152字32位DRAM模块:快速页面模式型与江
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
MSC23236CL-XXBC20 MSC23236CL-XXDS20 MSC23236C 2,097,152-WORD X 36-BIT DRAM MODULE : FAST PAGE MODE TYPE
2097152-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE
Solid-State Panel Mount Relay; Leaded Process Compatible:No; Output Current:50A; Output Type:SCR; Peak Reflow Compatible (260 C):No; Supply Voltage Max:660VAC; Supply Voltage Min:410VAC
OKI electronic components
OKI[OKI electronic componets]
OKI SEMICONDUCTOR CO., LTD.
IS24C02 IS24C08 IS24C04 IS24C01 24C16 IS24C16-3PI 16,384-BIT SERIAL ELECTRICALLY ERASABLE PROM
From old datasheet system
301K 1% 100PPM TF
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
RES 2.7 OHM 5% 0.1 W METAL FILM SMT 0805 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 2K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
RESISTOR,309,CR0805 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM 1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2线串行EEPROM中的CMOS
Integrated Silicon Solu...
Integrated Silicon Solution Inc
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution, Inc.
Integrated Silicon Solution...
IS24C02A-2GLI IS24C02A IS24C16A-3ZLA3 IS24C02A-2DL 1K-BIT/2K-BIT/4K-BIT/8K-BIT/16K-BIT 2-WIRE SERIAL CMOS EEPROM
ISSI[Integrated Silicon Solution, Inc]
M410000027 M410000022 M41000001Z M41000001W 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位12亩x 8-Bit/256亩x 16位),静态存储器
Advanced Micro Devices, Inc.
 
 Related keyword From Full Text Search System
M6MGT331S4BKT electronics M6MGT331S4BKT positive M6MGT331S4BKT Semiconductor M6MGT331S4BKT Reset M6MGT331S4BKT pressure sensor
M6MGT331S4BKT 型号替换 M6MGT331S4BKT data M6MGT331S4BKT gate M6MGT331S4BKT instruments M6MGT331S4BKT Data sheet
 

 

Price & Availability of M6MGT331S4BKT

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.8859748840332