PART |
Description |
Maker |
MMSF10N02Z ON2248 MMSF10N02ZR2 ON2247 |
From old datasheet system SINGLE TMOS POWER MOSFET 10 AMPERES 20 VOLTS 10000 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
MOTOROLA[Motorola, Inc] Motorola Mobility Holdings, Inc.
|
MMSF2P02E |
SINGLE TMOS POWER MOSFET 2.5 AMPERES 20 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MMSF3305 |
SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS
|
MOTOROLA[Motorola, Inc]
|
MTD3302 |
SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mohm
|
Motorola, Inc
|
MMSF5N02HD ON2268 |
SINGLE TMOS POWER MOSFET 5.0 AMPERES 20 VOLTS From old datasheet system
|
Motorola, Inc.
|
MMSF3P02HD_D ON2260 MMSF3P02HD |
SINGLE TMOS POWER MOSFET 3.0 AMPERES 20 VOLTS From old datasheet system Medium Power Surface Mount Products
|
Motorola, Inc ON Semi
|
MTSF3203_D ON2660 MTSF3203 |
SINGLE TMOS POWER MOSFET 4.9 AMPERES 20 VOLTS RDS(on) = 0.05 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc] ON Semi
|
MTSF3N02HD ON2662 ON2661 |
SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
MTSF2P03HD_D ON2659 MTSF2P03HD ON2658 |
From old datasheet system SINGLE TMOS POWER MOSFET 2.7 AMPERES 30 VOLTS RDS(on) = 0.090 OHM
|
ON Semi Motorola, Inc
|
MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
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