PART |
Description |
Maker |
AS4C1M16E5-60TC AS4C1M16E5-50TC AS4C1M16E5-60JC AS |
DRAM|EDO|1MX16|CMOS|TSOP|50PIN|PLASTIC DRAM|EDO|1MX16|CMOS|SOJ|42PIN|PLASTIC 内存| EDO公司| 1MX16 |CMOS | SOJ | 42PIN |塑料 1M X 16 EDO DRAM, 50 ns, PDSO44
|
Amphenol, Corp. ALLIANCE SEMICONDUCTOR CORP
|
AS4C1M16E5 |
5V / 3.3V Edo DRAM, 16M, 1Mx16
|
ALLIANCE
|
KMM5321204C2W |
1M x 32 DRAM SIMM
|
Samsung Semiconductor
|
KMM5322200C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
KMM5328004BSWG KMM5328004BSW |
8M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM5328100CK KMM5328100CKG KMM5328000CKG KMM532800 |
8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
KMM53232004CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM53232000CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
KMM5324004BSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
KMM5324100CKG KMM5324000CKG KMM5324100CK KMM532400 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|