| PART |
Description |
Maker |
| NDL7401P_00 NDL7401P NDL7401P1 NDL7401P1C NDL7401P |
1310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER
|
CEL[California Eastern Labs]
|
| NDL7502P NDL7503P NDL7503P1 NDL7503P1C NDL7503PC N |
InGaAsP STRAINED MQW DC-PBH PULSED LASER DIODE MODULE 1310nm OTDR APPLICATION InGaAsP的应变量子阱的DC -异质结脉冲激光二极管模块1310 OTDR的应
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| KLT-255544 |
1550nm InGaAsP strained MQW DFB-LD
|
KODENSHI KOREA CORP.
|
| NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NX7363JB-BC NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Labs
|
| NX8562LB NX8562LB-BA NX8562LB-CA NX8563LB NDL7603P |
1 550 nm CW LIGHT SOURCE InGaAsP STRAINED MQW-DFB LASER DIODE MODULE 1 550 nm的连续光源InGaAsP的应变量子阱激光器激光二极管模块
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX8510UD61 NX8510UD51 NX8510UD53 NX8510UD55 NX8510 |
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1610 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1510 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1530 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1550 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1570 nm.
InGaAsP MQW-DFB TOSA for 2.5 Gb/s CWDM application. Wavelength(typ) 1590 nm.
|
NEC
|
| NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
http://
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