| PART |
Description |
Maker |
| PBL40310 |
3.5 V GSM 900 MHz Power Amplifier
|
ERICSSON[Ericsson]
|
| MRFIC0913 |
900 MHz GSM CELLULAR INTEGRATED POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| 2SK3078 |
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
Toshiba Semiconductor
|
| 2SK3077 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3079 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
TOSHIBA
|
| TQ1422 |
GSM 850/900 DCS/PCS H3-Filter TQM7M4102 PA to Transceiver Interface Module
GSM850/900 and DCS1800/PCS1900 Tx - Bandpass Filter
|
TRIQUINT[TriQuint Semiconductor]
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| MWIC930 |
MWIC930R1, MWIC930GR1 N-CDMA, W-CDMA, GSM/GSM EDGE, 746-960 MHz, 30 W, 26-28 V RF LDMOS Integrated Power Amplifiers
|
Motorola
|
| ZAPD-900-5W |
Power Splitter/Combiner 2 Way-0 50楼? 100 to 900 MHz
Power Splitter/Combiner 2 Way-0 50Ω 100 to 900 MHz
|
Mini-Circuits
|
| ESSM-2-6 |
E-Series 2-Way 0o Power Divider 5 - 900 MHz
E-Series 2-Way 0篓卢 Power Divider 5 - 900 MHz
|
M/A-COM Technology Solutions, Inc.
|
| RF5110G |
3V GSM POWER AMPLIFIER 880 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
RF Micro Devices, Inc.
|
