| PART |
Description |
Maker |
| BAS70LT1 ON0123 |
CASE 318 08, STYLE 8 SOT 23 (TO 236AB)
From old datasheet system
70VOLTS SCHOTTKY BARRIER DIODES
CASE 318 08 STYLE 8 SOT 23 (TO 236AB)
|
Motorola, Inc
MOTOROLA[Motorola Inc]
ONSEMI[ON Semiconductor]
|
| MMBFJ309 MMBFJ309LT1 MMBFJ310LT1 ON2105 |
From old datasheet system
CASE 318?8, STYLE 10 SOT?3 (TO?36AB)
JFET VHF/UHF Amplifier Transistor
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BC817-16LT1 BC817-40LT3 BC817-25LT2 ON0159 |
General Purpose Transistors(NPN Silicon)
CASE 318-8, STYLE6 SOT-23(TO-236AB)
From old datasheet system
|
ON Semiconductor
|
| DTA143EE DTA143EE_D ON0279 |
Bias Resistor Transistor
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MMBV2104L MMBV2104LT1 MMBV2104LT3 |
UHF BAND, 12 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE CASE 318-07, 3 PIN
|
Motorola Mobility Holdings, Inc.
|
| BC857BWT1 BC857AWT1 BC858BWT1 BC856BWT1 BC858AWT1 |
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02, STYLE 3 SOT-323/SC-70 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CASE 419-02/ STYLE 3 SOT-323/SC-70
CASE 419-02 STYLE 3 SOT-323/SC-70
|
Motorola Mobility Holdings, Inc.
Motorola Inc
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| BC846AWT1 BC847AWT1 ON0161 BC848BWT1 BC848AWT1 BC8 |
General Purpose Transistors(NPN Silicon) 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CASE 419-2, STYLE 3 SOT-23/SC-0
From old datasheet system
|
ONSEMI[ON Semiconductor]
|
| 30KPA54A 30KPA84A 30KPA84C 30KPA132CA 30KPA43 30KP |
Diode TVS Single Uni-Dir 54V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 84V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 43V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 320V 30KW 2-Pin
Diode TVS Single Uni-Dir 400V 30KW 2-Pin Case P-600
Diode TVS Single Bi-Dir 30V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 42V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 51V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 58V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 60V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 288V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 144V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 72V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 71V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 66V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 108V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 102V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 78V 30KW 2-Pin Case P600 T/R
Diode TVS Single Uni-Dir 198V 30KW 2-Pin Case P600 T/R
Diode TVS Single Bi-Dir 64V 30KW 2-Pin Case P600 T/R
|
New Jersey Semiconductor
|
| AP1501A AP1501A-12 AP1501A-12K5 AP1501A-12K5A AP15 |
Adj, 150 Khz, 5 A PWM buck DC/DC converter
150Khz, 5A PWM Buck DC/DC Converter
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Clear; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Clear; Lens Style:(H x Dia) 8.7 x 5.8 mm; Voltage Rating:5V
IR Emitting Diode; LED Color:Infrared; Mounting Type:Through Hole; Terminal Type:3 Pin Leaded; Color:Infrared; Lens Style:(H x Dia) 12.5 x 10.0 mm; Voltage Rating:5.5V
Leaded Process Compatible: Yes
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Blue Gray; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Blue Gray; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:0.185A; Resistance, Rds on:6R; Voltage, Vgs Rds on measurement:10V; Case style:SOT-23 (TO-236); Current, Id max:0.185A; Current, Idm pulse:.8A; Marking, SMD:6K; Pins, No. RoHS Compliant: Yes
MOSFET, P SOT-23MOSFET, P SOT-23; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SOT-23; Current, Id cont:0.58A; Current, Idm pulse:2A; Power, Pd:0.35W; Resistance, Rds on:0.65R; SMD:1; Current, Id
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-385mA; On-Resistance, Rds(on):1.4ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-236; Drain Source On Resistance @ 10V:1.4ohm
IR Emitting Diode; Mounting Type:Through Hole; LED Color:Infrared; Leaded Process Compatible:Yes; Terminal Type:2 Pin Leaded; Color:Infrared; Lens Style:(H x W) 8.7 x 5.8 mm; Voltage Rating:5V
TRANSISTOR,MOSFET,P-CHANNEL,60V V(BR)DSS,270MA I(D),TO-226AA RoHS Compliant: Yes
IR EMITTER; Wavelength, typ:950nm; Current, forward If:5mA; Angle, viewing:90(degree); Temperature, operating range:-25(degree C) to (degree C) RoHS Compliant: Yes
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-580mA; On-Resistance, Rds(on):650mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23
|
ANACHIP[Anachip Corp]
|
| RO2044 |
318.00 M SAW Resonator
|
RFM[RF Monolithics, Inc]
|
| LA-B3 LA000B3B LA000B3CB LA000B3U LAIC3B3B LAIC3B3 |
METAL CASE, CASE-MOUNTED SEMICONDUCTORS
|
CTS[CTS Corporation]
|
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