PART |
Description |
Maker |
V53C104H V53C104HP50 V53C104HP55L V53C104HP40 V53C |
Ultra-High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM ULTRA-HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
MOSEL[Mosel Vitelic, Corp]
|
V53C400 |
High Performance / Low Power 4M x 1-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
5962-8872301CX |
Low-Power, SPST, Fast, CMOS Analog Switch 逻辑门|输入与|架F - TTL电|双酯| 14PIN |陶瓷
|
Black Box, Corp.
|
HM-6642/883 |
PROM, 512x8 CMOS, high speed, low power, Fast Access Time 120/200ns
|
Intersil Corporation
|
V53C104AP-100L |
IC REGULATOR 3.3V 1A TO220FP HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
ADCMP609BRMZ-REEL1 ADCMP609BRMZ-REEL71 ADCMP609BRM |
Rail-to-Rail, Fast, Low Power 2.5 V to 5.5 V, Single-Supply TTL/CMOS Comparator
|
Analog Devices
|
TS27M4AC TS27M4AI TS27M4AM TS27M4BC TS27M4BI TS27M |
PRECISION LOW POWER CMOS CMOS OP-AMPS PRECISION LOW POWER CMOS QUAD OPERATIONAL AMPLIFIERS
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
AS6UA5128 AS6UA5128-BC AS6UA5128-BI |
2.3V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K Intelliwatt low-power CMOS SRAM 2.3V.6V的为512k Intelliwatt低功耗CMOS SRAM 2.3V to 3.6V 512K×8 Intelliwatt Low-Power CMOS SRAM(2.3V 3.6V 512K×8 Intelliwatt 低功CMOS 静态RAM) 2.3V to 3.6V 512K8 Intelliwatt low-power CMOS SRAM 2.3V to 3.6V 512K】8 Intelliwatt low-power CMOS SRAM
|
Alliance Semiconductor Corporation SEMICOA[Semicoa Semiconductor]
|
L1152L-XX-AF5-R L1152G-XX-AF5-R |
500mA, LOW DROPOUT, LOW NOISE ULTRA-FAST WITH SOFT START CMOS LDO REGULATOR
|
Unisonic Technologies
|
AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能 2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
|
Alliance Semiconductor Corporation Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM 55ns; Ultra low power 128k x 8 CMOS SRAM 70ns; Ultra low power 128k x 8 CMOS SRAM 85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|