| PART |
Description |
Maker |
| MT58L512L18P MT58L256L32P |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| MT58L256L36P MT58L256L32P MT58L256V32P MT58L256V36 |
8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM
|
Micron Technology
|
| MT58L32L32P MT58L32L36P MT58L64L18P |
32K x 32, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
32K x 36, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器)
64K x 18, 3.3V I/O, Pipelined, SCD SyncBurst SRAM(1Mb,3.3V输入/输出，流水线式，单循环取消选择，同步脉冲静态存储器) 64K的18.3V的I / O的流水线，SCD的SyncBurst的SRAM兆，3.3V的输输出，流水线式，单循环取消选择，同步脉冲静态存储器
|
Micron Technology, Inc.
|
| GS880F18AT-6I GS880F32AT-6I |
6ns 512K x 18 8Mb sync burst SRAM
6ns 256K x 32 8Mb sync burst SRAM
|
GSI Technology
|
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V512V36D |
16Mb SYNCBURST⑩ SRAM
16Mb SYNCBURST SRAM
|
MICRON[Micron Technology]
|
| MT55L256L32F MT55L512L18F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
| MT55L512V18F MT55L256V32F MT55L256V36F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
| GS78116AGB-8I GS78116AB-10 GS78116AB-10I GS78116AB |
512K X 16 STANDARD SRAM, 10 ns, PBGA119
512K x 16 8Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| A0A19 |
Super Low Power Slow SRAM - 8Mb
|
Hynix Semiconductor
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
