PART |
Description |
Maker |
MPC2107SG15 MPC2104 MPC2104SG66 MPC2105SG66 MPC210 |
256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola, Inc MOTOROLA[Motorola Inc]
|
MPC2004 MPC2005 |
(MPC2004 / MPC2005) 256KB and 512KB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
|
Motorola
|
MPC2003SG50 MPC2003SG60 MPC2003SG66 MPC2002 MPC200 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 9 ns, DMA136 256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 14 ns, DMA136
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
M29W400DT45N1 M29W400DT45N6E M29W400DT55M1 M29W400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
M29W400BT 6584 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Low Voltage Single Supply Flash Memory From old datasheet system
|
STMicro
|
M29F400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory(4Mb闪速存储器) 4Mb12KB的x8256Kb的x16插槽,引导块)单电源闪存4Mb的闪速存储器
|
意法半导 STMicroelectronics N.V.
|
M29W400BT90M1 M29W400BT90M6 M29W400BT90ZA6T M29W40 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory 4兆位12KB的x856Kb的x16插槽,引导块)低电压单电源闪
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] STMicroelectronics N.V.
|
M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA 4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
FM18L08 FM18L08-70-P FM18L08-70-S |
.050 X .050 MICRO STRIPS 256Kb.7 - 3.6V的Bytewide FRAM存储 256Kb 2.7-3.6V Bytewide FRAM Memory
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers ETC[ETC] Ramtron International
|
M27C405 4378 M27C405-90N6TR M27C405-100B1TR M27C40 |
4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公512KB的存储器 4 Mbit 512Kb x 8 OTP EPROM 4兆位× 8检察官办公12KB的存储器 Aluminum Electrolytic Radial Lead 5mm Length Capacitor; Capacitance: 33uF; Voltage: 25V; Case Size: 6.3x5 mm; Packaging: Bulk 4兆位× 8检察官办公12KB的存储器 From old datasheet system 4 Mbit (512Kb x 8) OTP EPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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