| PART |
Description |
Maker |
| MBM27256-20 MBM27256-25 MBM27256 |
MOS Memories
|
Fujitsu
|
| 27C256 |
MOS Memories
|
Atmel-Grenoble
|
| AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 |
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位）2兆位米16位）.0伏的CMOS只，同时作业闪存，和
64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and SPECIALTY MEMORY CIRCUIT, PBGA73
|
Spansion Inc.
Xilinx, Inc.
Spansion, Inc.
|
| TPCP8402 |
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
TOSHIBA[Toshiba Semiconductor]
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| AN560 |
Lowpower 3-wire non-volatile memories
|
Microchip Technology
|
| 93LC66 93LC56 |
Lowpower 3-wire non-volatile memories
|
Microchip Technology
|
| LH28F160BGH-TL LH28F160BG-TL |
16 M-bit (1 MB x 16) Smart 3 Flash Memories
|
SHARP[Sharp Electrionic Components]
|
| LH28F800SG-L10 LH28F800SG-L70 |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories
|
Sharp Corporation
|
| LH28F800BGHRTL85 LH28F800BGRTL85 LH28F800BGXX-XL12 |
8 M-bit (512 kB x 16) SmartVoltage Flash Memories
|
SHARP[Sharp Electrionic Components]
|
| SA589 |
LD/DTMF SWITCHABLE DIALLERS WITH DEDICATED KEYS FOR 20 MEMORIES
|
SAMES[Sames]
|
