| PART |
Description |
Maker |
| NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
http://
|
| ML99212 |
INGAASP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Semiconductor
|
| ML976H6F ML9XX6 ML920B6S |
InGaAsP-MQW-FP LASER DIODES
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML976H10 ML9XX10 |
InGaAsP - MQW - HIGH POWER LASER DIODES
InGaAsP-MQW HIGH POWER LASER DIODES
|
Mitsubishi Electric Corporation
|
| ML785B12 ML7XX12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
From old datasheet system
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ML976H11F ML9XX11 |
InGaAsP-MQW-DFB LASER DIODES InGaAsP的量子阱- DFB激光器
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX8303CG-CC NX8303BG-CC NX8303BG |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
NECs 1310 nm InGaAsP MQW DFB LASER DIODE IN COAXIAL PACKAGE FOR 622 Mb/s APPLICATION
|
CEL[California Eastern Labs]
http://
|
| NX5317 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
1 310nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6504SH NX6504SJ NX6504GK NX6504SI NX6504SK NX650 |
1550 nm InGaAsP MQW DFB laser diode for fiber optic communications.
1550 nm InGaAsP MQW DFB LASER DIODE IN CAN PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
NEC
CEL[California Eastern Labs]
|
