| PART |
Description |
Maker |
| ISL5944207 |
1GHz, 4 x 1 Multiplexing Amplifier
|
Intersil Corporation
|
| ISL59444IB-T13 ISL59444IB-T7 ISL59444IBZ ISL59444I |
1GHz, 4 x 1 Multiplexing Amplifier with Synchronous Controls
|
Intersil Corporation
|
| D2220UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D2005UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| 310-025103-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025109-012 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| EL2460 EL2260CN EL2260CS EL2460CS EL2460CN EL2260 |
1GHz, 4x1 Multiplexing Amplifier; Temperature Range: -40°C to 85°C; Package: 14-SOIC T&R
Dual/Quad 130MHz Current Feedback Amplifiers
Op Amp, Dual 130MHz, Current Feedback, 75?Cable Driver, Dual or Single Supply (33V)
Op Amp, Quad 130MHz, Current Feedback, 75Cable Driver, Dual or Single Supply (33V)
|
INTERSIL[Intersil Corporation]
|
| MDM-7000 MDM-7002 MDM-7004 MDM-7008 MDM-7016 |
Multiplexing Systems
|
Opticomm Corporation
|
