| PART |
Description |
Maker |
| AM29LV400BT55REC AM29LV400BT70EI AM29LV400BB55REC |
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
IC,FLASH,4MBIT,CMOS,256KX8 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
|
| MBM29LV400BC-55PCV MBM29LV400BC-55PBT MBM29LV400TC |
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 90 ns, PBGA48
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 55 ns, PBGA48
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 70 ns, PBGA48
FLASH MEMORY CMOS 4M (512K X 8/256K X 16) BIT 256K X 16 FLASH 3V PROM, 55 ns, PDSO48
|
Spansion Inc.
Spansion, Inc.
|
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分（12k × 8/256K × 16Falsh存储器（12k × 8/256K × 16位单5V的电源电压闪速存储器
|
Fujitsu Limited
Fujitsu, Ltd.
|
| F49L400BA |
4 Mbit (512K x 8/256K x 16) 3V Only CMOS Flash Memory 4兆位（为512k × 8/256K × 16V时仅闪存的CMOS
|
Elite Semiconductor Memory Technology, Inc.
|
| GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I |
512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| GS880F18 GS880F36T-11I GS880F36T-14 GS880F36T-12I |
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位（512K x 18位）同步静态RAM（带2位脉冲地址计数器）)
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 14 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 12 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
|
GSI Technology, Inc.
Molex, Inc.
|
| IS61NP25632 IS61NP25636 IS61NP51218 IS61NP25632-5T |
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K × 3256K × 36和管道为512k × 18编号WAIT状态总线的SRAM
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| MBM29LV400B-10 MBM29LV400B-12 MBM29LV400T-10 MBM29 |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器)
|
Fujitsu Limited
|
| MBM29F400BC-70 MBM29F400BC-55 MBM29F400BC-55PF MBM |
FLASH MEMORY 4M (512K x 8/256K x 16) BIT
|
Fujitsu Microelectronics
|
| MBM29DL400BC-70 MBM29DL400BC-55 MBM29DL400TC-12 MB |
FLASH MEMORY 4M (512K x 8/256K x 16) BIT
|
Fujitsu Microelectronics
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
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