| PART |
Description |
Maker |
| HMC592 |
high dynamic range GaAs PHEMT MMIC 2 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| MGA-637P8-BLKG MGA-637P8-TR1G |
High Linearity Low Noise Amplifi er
|
AVAGO TECHNOLOGIES LIMITED
|
| MCH3007 |
High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| 2SK93212 2SK932-22-TB-E 2SK932-23-TB-E 2SK932-24-T |
High-Frequency Low-Noise Amplifi er Applications
|
Sanyo Semicon Device
|
| MCH3914 |
High-Frequency Amplifi er, Analog Switch Applications
|
Sanyo Semicon Device
|
| PE6200 |
75 Watts High Power WR-28 RF Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0309-20 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| ES0189 |
High Power Switch 2.4 GHz to 2.5 GHz
|
Micronetics, Inc.
|
| ES0309-10 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
