| PART |
Description |
Maker |
| 2N2222A |
HIGH SPEED MEDIUM POWER, NPN SWITCHING TRANSISTOR 800 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-206AA
HIGH SPEED MEDIUM POWER / NPN SWITCHING TRANSISTOR
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| 2SB765 2SB765K |
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K 中速与电源开关与2SD864K互补
MEDIUM SPEED AND POWER SWITCHING COMPLEMENTARY PAIR WITH 2SD864K
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 2N2894CSM03 |
HIGH SPEED, MEDIUM POWER, PNP
|
Seme LAB
|
| 2N2222ADCSM06 |
DUAL HIGH SPEED, MEDIUM POWER
|
Seme LAB
|
| FS3UM-10 FS3UM |
Power MOSFETs: FS Series, Medium Voltage, 500V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| CSB772P CSB772R CSB772 CSB772E CSB772Q |
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSD882
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSD882E
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSD882R
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSD882Q
10.000W Medium Power PNP Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSD882P
Audio Frequency Power Amplifier and Low Speed Switching
|
CDIL[Continental Device India Limited]
|
| 2SC2654 |
From old datasheet system
Audio Frequency Power Amplifier, Medium Speed Switching
|
NEC[NEC]
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| RM20C1A-XXS RM20DA/CA/C1A-XXS RM20CA-XXS RM20DA-XX |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
