| PART |
Description |
Maker |
| RFP12N20 RFP12N18 RFM12N20 RFM12N18 |
12A/ 180V and 200V/ 0.250 Ohm/ N-Channel Power MOSFETs
12A 180V and 200V 0.250 Ohm N-Channel Power MOSFETs
12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFP12N06RLE RFD12N06RLESM RFD12N06RLE FN2407 |
From old datasheet system
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs
12A, 60V, 0.135 Ohm, N-Channel, Logic Level, Power MOSFETs(12A, 60V, 0.135 Ω, N沟道,逻辑电平,功率MOS场效应管) 12 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
|
| RFP12P10 RFP12P08 FN1495 |
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs(12A, 80V 100V, 0.300 Ω, P沟道增强模式功率MOS场效应管) 12 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
12A/ 80V and 100V/ 0.300 Ohm/ P-Channel Power MOSFETs
12A 80V and 100V 0.300 Ohm P-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRFP9240 |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-12A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-12A)
|
IRF[International Rectifier]
|
| 1N974B 1N963B 1N965B 1N962B 1N970B 1N960B 1N968D 1 |
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 30V. Test current 4.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 120V. Test current 1.0mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 75V. Test current 1.7mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 160V. Test current 0.80mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -20% tolerance.
0.5W SILICON ZENER DIODES
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 50μA低电流操作，低反向漏，低噪声稳压二极管（250μA工作电流，小反向漏电流，低噪声，齐纳二极管）
PC 4/ 5-ST-7,62 .5W硅稳压二极管
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 180V. Test current 0.68mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 200V. Test current 0.65mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 150V. Test current 0.85mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 68V. Test current 1.8mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 22V. Test current 5.6mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 7.5V. Test current 16.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 130V. Test current 0.95mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 51V. Test current 2.5mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 62V. Test current 2.0mA. -10% tolerance.
0.5W, silicon zener diode. Zener voltage 56V. Test current 2.2mA. -20% tolerance.
0.5W, silicon zener diode. Zener voltage 47V. Test current 2.7mA. -10% tolerance.
|
JGD[Jinan Gude Electronic Device]
济南固锝电子器件有限公司
Jinan Gude Electronic Device Co., Ltd.
Semtech, Corp.
娴???洪??靛??ㄤ欢??????
Jinan Gude Electronic D...
|
| IRF630 FN1578 RF1S630SM |
9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
9A/ 200V/ 0.400 Ohm/ N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RF1S9530SM IRF9530 FN2221 |
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
12A, 100V, 0.300 Ohm, P-Channel Power MOSFETs
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| MTP9N25E MTP9N25 MTP9N25E-D |
TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM 9 A, 250 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| FSS23A0R FSS23A0D FSS23A0D1 FSS23A0D3 FSS23A0R1 FN |
9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.33 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
From old datasheet system
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
|
