| PART |
Description |
Maker |
| S-AV28 |
VHF Band HAM FM RF Power Amplifier Module
|
Toshiba
|
| S-AV5 |
RF POWER AMPLIFIER MODULE VHF POWER AMPLIFIER MODULE(HAM FM)
|
Toshiba Semiconductor
|
| TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 2SC3501 |
VHF AMPLIFIER VHF TV TUNER MIXER, OSCILLATOR 甚高频功放甚高频电视调谐器混频器，振荡器
From old datasheet system
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HN3C01FU |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| MMBT9018G-X-AE3-R MMBT9018G-X-AN3-R MMBT9018L-X-AE |
AM/FM AMPLIFIER, LOCAL OSCILLATOR OF FM/VHF TUNER
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE PACKAGE-3
|
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| BFR97 |
VHF-UHF Power Amplifier
|
ST Microelectronics
|
| S-AV10H S-AV10L |
VHF RF Power Amplifier Module
|
TOSHIBA[Toshiba Semiconductor]
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| MS1337 |
RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS
VHF 100-175 MHz, Class C, Common Emitter; P(out) (W): 30; P(in) (W): 3; Gain (dB): 10; Vcc (V): 12.5; Cob (pF): 120; fO (MHz): 0; Case Style: M113 VHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 2SC2638 |
TRANSISTOR (VHF BAND POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA
|
