PART |
Description |
Maker |
MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module (DISCRETE/OPTO)
|
Toshiba Semiconductor
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
SSW4N60B SSI4N60B SSI4N60BTU SSW4N60BTM |
600V N-Channel MOSFET 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 600V N-Channel B-FET / Substitute of SSI4N60A 600V N-Channel B-FET / Substitute of SSW4N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
IRG4RC10U IRG4RC10UTR IRG4RC10UTRL IRG4RC10UTRR |
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.15V, @Vge=15V, Ic=5.0A)
|
International Rectifier
|
RHRP860CC FN3964 RHRP840CC |
8A, 400V - 600V Hyperfast Dual Diodes 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 8A/ 400V - 600V Hyperfast Dual Diodes 8A, 400V - 600V Hyperfast Dual Diodes(8A, 400V-600V 超快速二极管) 8 A, 400 V, SILICON, RECTIFIER DIODE From old datasheet system
|
Intersil, Corp. Intersil Corporation
|
FFP08S60SN FFP08S60SNTU |
8A, 600V STEALTH II Rectifier; Package: TT220; No of Pins: 2; Container: Rail 8 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC 8A, 600V STEALTHTM II Rectifier
|
Fairchild Semiconductor, Corp.
|
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