| PART |
Description |
Maker |
| SFW12955 SFW2955 |
Advenced Power MOSFET 9.4 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
Advanced Power MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM220A |
N-Channel Power MOSFET(N娌??澧?己?????OS?烘?搴??锛??婧????负200V锛??????讳负0.8惟锛???垫?涓?.13A锛?
Advanced Power MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
|
| IRFIZ24NPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFP9140NPBF IRFP9140NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRF7105PBF IRF7105TRPBF |
Advanced Process Technology
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI1310NPBF IRFI1310NPBF-15 |
ADVANCED PROCESS TECHNOLOGY
HEXFET㈢ Power MOSFET
HEXFET? Power MOSFET
|
International Rectifier
|
| IRLI3705NPBF IRLI3705NPBF-15 |
HEXFET?Power MOSFET
HEXFET㈢Power MOSFET
ADVANCED PROCESS TECHNOLOGY
|
International Rectifier
|
| IRF610A |
Advanced Power MOSFET
N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为200V，导通电阻为1.5Ω，漏电流.3A 3.3 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRLWI610A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRLWI630A |
Advanced Power MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
