PART |
Description |
Maker |
HYB5118160BSJ-60 HYB5118160BSJ-50 HYB3118160 HYB31 |
1M x 16 Bit 5 V 60 ns FPM DRAM 1M x 16 Bit 5 V 50 ns FPM DRAM 1M x 16-Bit Dynamic RAM 1k Refresh (Fast Page Mode) 1M*16-Bit Dynamic RAM
1k Refresh
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020 |
4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 4M x 36 Bit FPM DRAM Module with Parity
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
|
HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity 8M x 36 Bit DRAM Module with Parity 8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
IBM025170NT3B-70 IBM025161LG5B-70 |
256K X 16 VIDEO DRAM, 70 ns, PDSO70 0.400 INCH, TSOP-70 256K X 16 VIDEO DRAM, 70 ns, PDSO64
|
Honeywell International, Inc.
|
HY534256 |
256K x 4-Bit CMOS DRAM
|
Hynix Semiconductor
|
AM90CL255-08JC AM90CL255-15JC AM90CL255-12PC |
256K X 1 NIBBLE MODE DRAM, 80 ns, PQCC18 256K X 1 NIBBLE MODE DRAM, 150 ns, PQCC18 256K X 1 NIBBLE MODE DRAM, 120 ns, PDIP16
|
ADVANCED MICRO DEVICES INC
|
MT4C4256 |
256K x 4 DRAM Standard Or Low Power, Extended Refresh(标准或低功率,扩展刷新,256K x 4动态RAM)
|
Micron Technology, Inc.
|
HM514280ALZ-7 HM514280ALTT-7 HM514280ALJ-10 |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 256K X 18 FAST PAGE DRAM, 70 ns, PDSO40 256K X 18 FAST PAGE DRAM, 100 ns, PDSO40
|
|
HM514260AJ-7 HM514260ALJ-7 HM514260ALZ-10 |
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40 256K X 16 FAST PAGE DRAM, 100 ns, PZIP40
|
|