| PART |
Description |
Maker |
| V54C3256164VALT6 V54C3256804VAT V54C3256404VAT V54 |
256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 56Mbit SDRAM.3伏，第二的TSOP /系统芯片的BGA / WBGA包装16米x 162 × 84米4
|
Mosel Vitelic, Corp.
|
| K4S560432A K4S560432A-TC_L75 K4S560432A-TC_L80 K4S |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM16米x 4位4银行同步DRAM LVTTL
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6米x 4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5DU113222FMP-25 HY5DU113222FMP-22 HY5DU113222FMP |
GDDR SDRAM - 512Mb
|
Hynix Semiconductor
|
| HY5DU561622ETP HY5DU561622ETP-28 HY5DU561622ETP-33 |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
| W9412G2CB |
1M × 4 BANKS × 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DU283222AF-22 HY5DU283222AF-28 HY5DU283222AF-33 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
|
| HY5DS283222BF-28 HY5DS283222BFP-28 HY5DS283222BF-4 |
128M(4Mx32) GDDR SDRAM
|
Hynix Semiconductor Inc.
http://
|
| W9412G2IB |
1M X 4 BANKS X 32 BITS GDDR SDRAM
|
Winbond
|
| HY5DS573222F-36 HY5DS573222F-28 HY5DS573222FP-4 HY |
256M(8Mx32) GDDR SDRAM 8M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| K4S560432B-TC_L1H K4S560432B-TC_L1L K4S560432B-TC_ |
256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL 56Mbit SDRAM6x 4位4银行同步DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HY5DW283222BF HY5DW283222BF-2 HY5DW283222BF-22 HY5 |
128M(4Mx32) GDDR SDRAM
4M X 32 DDR DRAM, 0.6 ns, PBGA144 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MO-205DAE, FBGA-144
|
Hynix Semiconductor, Inc.
|
