PART |
Description |
Maker |
IXDP35N60B IXDH35N60B IXDH35N60BD1 |
IGBT Discretes: NPT IGBT IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
SGD04N60 |
Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA
|
Infineon Technologies AG
|
IXGA15N120B IXGP15N120B |
HiPerFAST IGBT IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
http:// IXYS Corporation
|
IXGH28N120B IXGT28N120B |
High Voltage IGBT IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
|
IXYS Corporation
|
FID50-12BD FIO50-12BD |
IGBT Discretes MOSFET / IGBT AC Switches: IGBT AC Switches Bidirectional Switch with IGBT and fast Diode Bridge
|
IXYS[IXYS Corporation]
|
IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB 43A/ 1200V/ NPT Series N-Channel IGBT 43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
Q67040-S4274 Q67040-S4276 Q67040-S4275 SGW15N120 S |
Fast S-IGBT in NPT-Technology Fast IGBT in NPT-technology 在不扩散核武器条约快速IGBT技 IGBTs & DuoPacks - 15A 1200V TO220AB IGBT
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
IXGP20N120 IXGA20N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
http:// IXYS[IXYS Corporation]
|
IXGH45N120NBSP IXGT45N120 IXGH45N120 |
IGBT Discretes: Low Saturation Voltage Types Single IGBT
|
IXYS[IXYS Corporation]
|
SKW15N60 SKB15N60 SKP15N60 |
IGBTs & DuoPacks - 15A 600V TO247AC IGBT Diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast S-IGBT in NPT-Technology with An...
|
INFINEON[Infineon Technologies AG]
|