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KMM5364005BSW - 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4

KMM5364005BSW_492601.PDF Datasheet


 Full text search : 4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4


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32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双66分,启动3V电源快闪记忆
32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory 32兆位4Mb的x8或功能的2Mb x16插槽,双1616分,启动V电源快闪记忆
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意法半导
STMicroelectronics N.V.
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IBM0418A8ACLAB IBM0436A4ACLAB 8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的(128K的36)的SRAMMb的(128K的36)寄存器锁存模式的同步的CMOS静态RAM)的
IBM Microeletronics
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64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
GS74108AGX-12I GS74108AJ-12I GS74108AJ-10I GS74108 512K x 8 4Mb Asynchronous SRAM 512K X 8 STANDARD SRAM, 12 ns, PDSO36
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WEIDA[Weida Semiconductor, Inc.]
 
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