PART |
Description |
Maker |
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT35GP120JDQ2 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT15GP60K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT65GP60L2DQ2 APT65GP60L2DQ2G |
POWER MOS 7 IGBT
|
http:// Advanced Power Technology
|
APT40GP60J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT45GP120J |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT65GP60L2DF2 |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology http://
|
APT32GU30B |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT13GP120K |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|
APT50GP60S |
MOSFET POWER MOS 7 IGBT
|
Advanced Power Technology
|