PART |
Description |
Maker |
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
|
General Electric Solid State GE Solid State
|
SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
MRF18085B MRF18085BLSR3 MRF18085BR3 |
RF Power Field Effect Transistors
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
ATC100B330JT500XT ATC200B203KT50XT CDR33BX104AKYS |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
MAPL-000817-015CPC |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MRF19125 MRF19125R3 MRF19125SR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF6S21050LR3 MRF6S21050LSR3 |
RF Power Field Effect Transistors
|
Freescale (Motorola) Freescale Semiconductor, Inc
|
MRF8S19260HR6 MRF8S19260HSR6 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF8S18210WHS MRF8S18210WGHSR3 MRF8S18210WHSR3 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3 |
RF POWER FIELD EFFECT TRANSISTORS
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|