PART |
Description |
Maker |
BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN Silicon RF Transistor
|
INFINEON[Infineon Technologies AG]
|
BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
BFR193W |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers
|
INFINEON[Infineon Technologies AG] http://
|
BFR949L3 |
RF-Bipolar - NPN Silicon RF transistor for low noise, high gain broadband amplifiers in TSLP-3
|
Infineon Technologies AG
|
BFP183R |
RF-Bipolar - For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA NPN Silicon RF Transistor
|
Infineon Technologies AG
|
BFQ19S |
RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz NPN Silicon RF Transistor
|
Infineon Technologies AG
|
BFR92P Q62702-F1050 BFR92PQ62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管(对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关) TRANSISTOR UHF BIPOLAR BREITBAND From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MJW3281AG MJW3281A10 MJW1302AG |
Complementary NPN-PNP Silicon Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 230 VOLTS 200 WATTS 15 A, 230 V, NPN, Si, POWER TRANSISTOR, TO-247AD Complementary NPN-PNP Silicon Power Bipolar Transistors
|
ON Semiconductor
|
M306N0FGTFP M306N0MCT |
60 W / 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON 60 W, 225 to 400 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON 60 W, 225 to 400 MHz CONTROLLED Q?BROADBAND RF POWER TRANSISTOR NPN SILICON
|
Tyco Electronics
|
SFBUV60 BUV60.MOD |
50 A, 125 V, NPN, Si, POWER TRANSISTOR, TO-204AE Bipolar NPN Device
|
SEMELAB LTD Seme LAB
|
2N5429.MOD 2N5429 |
Bipolar NPN Device in a Hermetically sealed TO66 7 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-213AA
|
Seme LAB SEMELAB LTD
|