| PART |
Description |
Maker |
| MX27C8000A MX27C8000AMC-10 MX27C8000AMC-12 MX27C80 |
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PQCC32
JT 21C 21#16 SKT RECP 1M X 8 OTPROM, 90 ns, PDSO32
Single Output LDO, 100mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 1M X 8 OTPROM, 120 ns, PDSO32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 120 ns, PQCC32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 100 ns, PQCC32
8M-BIT [1M x8] CMOS EPROM 1M X 8 OTPROM, 90 ns, PDIP32
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| TC58128FTI |
128M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| TC58V32FT |
32M-Bit CMOS NAND EPROM
|
Toshiba Semiconductor
|
| NMC27C64 NMC27C64N200 NMC27C64Q150 NMC27C64NE200 |
65 /536-Bit (8192 x 8) CMOS EPROM
IC-64K CMOS PROM 8K X 8 EEPROM 5V, 200 ns, PDIP28
65,536-Bit (8192 x 8) CMOS EPROM
64KBit (8192 x 8) CMOS EPROM [Life-time buy]
|
Fairchild Semiconductor, Corp.
|
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| MX27C256 MX27C256PC-10 MX27C256PC-12 MX27C256PC-15 |
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDSO28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PQCC32
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 70 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 100 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 120 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 150 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 90 ns, PDIP28
256K-BIT [32K x 8] CMOS EPROM 32K X 8 OTPROM, 55 ns, PDIP28
|
PROM
Macronix International Co., Ltd.
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| K9F4G08U0M |
512M x 8 Bits / 1G x 8 Bits NAND Flash Memory 512M x 8 1克8位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| MX25UM51245G |
1.8V 512M-BIT [x 1/x 8] CMOS MXSMIO
|
Macronix International
|
| NM27C240 NM27C240QE120 |
4 Meg (256K x 16) High Performance CMOS EPROM [Life-time buy]
4,194,304-Bit (256k x 16) High Performance CMOS EPROM
4 /194 /304-Bit (256k x 16) High Performance CMOS EPROM
4,194,304位（256k × 16）高性能的CMOS存储
|
FAIRCHILD[Fairchild Semiconductor]
|
|
