| PART |
Description |
Maker |
| 1SS322 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
Toshiba Semiconductor
|
| 1SS321 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
Toshiba Semiconductor
|
| KDR784 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| HN2S01FU E001995 |
From old datasheet system
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| KDR377 |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| HRB0103B |
Silicon Schottky Barrier Diode for Low Voltage High Speed Switching , Rectifying
|
Renesas Electronics Corporation
|
| 1SS294 |
Diode Silicon Epitaxial Schottoky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
|
TOSHIBA
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage High Speed Switching Applications
|
TOSHIBA
|
| KTX402U |
EPITAXIAL PLANAR NPN TRANSISTOR SCHOTTKY BARRIER TYPE DIODE (GENERAL PURPOSE, LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| BAP63-02 |
High speed switching for RF signals Low diode capacitance Low diode forward resistance
|
TY Semiconductor Co., Ltd
|
| BAP63-03 |
High speed switching for RF signals Low diode capacitance Low diode forward resistance
|
TY Semiconductor Co., Ltd
|
