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KM29V16000AR - 2M X 8 BIT NAND FLASH MEMORY

KM29V16000AR_511260.PDF Datasheet


 Full text search : 2M X 8 BIT NAND FLASH MEMORY


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PART Description Maker
K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
CAT28F010 CAT28F010TI-70T CAT28F010PI-70T CAT28F01 120ns 2M-bit CMOS flash memory
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High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
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CATALYST[Catalyst Semiconductor]
K9F6408U0C-V 8M x 8 Bit NAND Flash Memory
SAMSUNG SEMICONDUCTOR CO. LTD.
KM29V32000TS 4M X 8 BIT NAND FLASH MEMORY
Samsung semiconductor
KM29V64001T 8M X 8 BIT NAND FLASH MEMORY
Samsung semiconductor
K9F6408U0M-TCB0 K9F6408U0M-TIB0 8M x 8 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F6408U0B K9F6408U0B-TCB0 K9F6408U0B-TIB0 8M x 8 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F5608U0M-YCB0 K9F5608U0M-YIB0 32M x 8 Bit NAND Flash Memory
SAMSUNG SEMICONDUCTOR CO. LTD.
KM29N32000TS 4M x 8 Bit NAND Flash Memory(4M x 8NAND闪速存储器)
SAMSUNG SEMICONDUCTOR CO. LTD.
K9F2808U0C K9F2808U0C-F K9F2808U0C-FCB0 K9F2808U0C 16M x 8 Bit NAND Flash Memory
Samsung Electronic
SAMSUNG[Samsung semiconductor]
K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K 16M x 8 Bit NAND Flash Memory
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SAMSUNG[Samsung semiconductor]
 
 Related keyword From Full Text Search System
KM29V16000AR Polarity KM29V16000AR reference KM29V16000AR taping code KM29V16000AR barrier KM29V16000AR byte
KM29V16000AR Bipolar KM29V16000AR state KM29V16000AR 替换的 KM29V16000AR timer KM29V16000AR Data sheet
 

 

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