| PART |
Description |
Maker |
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
| LMP2003 |
VHF Silicon MOSFET Power Amplifier Module(5.5W ,7.2V,220MHz-222MHz)(VHF MOSFET功率放大器模输出功率:5.5W,电压:7.2V,220MHz-222MHz))
|
Semelab(Magnatec)
|
| TBB1010 |
Twin Build in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| HN3C01FU |
NPN EPITAXIAL PLANAR TYPE (TV TUNERM VHF CONVERTER, TV VHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| BGY36 BGY35 BGY32 BGY33 |
VHF power amplifier modules
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| S-AV35A |
RF POWER AMPLIFIER MODULE FM RF POWER AMPLIFIER MODULE FOR 32-W COMMERCIAL VHF RADIO APPLICATIONS
|
Toshiba Semiconductor
|
| NE55410GR NE55410GR-T3-AZ 55410 |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
CEL[California Eastern Labs]
|
| NE55410GR NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
NEC
|
| 55410 NE55410GR-T3-AZ |
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
California Eastern Laboratories
|
| S-AV28 |
VHF Band HAM FM RF Power Amplifier Module
|
Toshiba
|
