| PART |
Description |
Maker |
| K4H510438C-ZCCC K4H510438C-ZLB3 K4H510438C-ZLCC K4 |
512MB C-DIE DDR SDRAM SPECIFICATION
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4H511638D K4H510438D |
(K4H51xx38D) 512Mb D-die DDR SDRAM Specification
|
Samsung semiconductor
|
| K4H510738E-TC_LB0 K4H510638E-TC_LA2 K4H510638E-TC_ |
Stacked 512Mb E-die DDR SDRAM Specification (x4/x8)
|
SAMSUNG[Samsung semiconductor]
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4H511638D-UCC K4H511638D-UC3 K4H510838D-LA2 K4H51 |
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| HYB25D512160BE-5 HYB25D512800BC-5 HYB25D512800BE-5 |
DDR SDRAM Components - 512Mb (32Mx16) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR400 (3-3-3)
DDR SDRAM Components - 512Mb FBGA (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (32Mx16) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb FBGA (128Mx4) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (64Mx8) DDR333 (2.5-3-3)
DDR SDRAM Components - 512Mb (128Mx4) DDR266A (2-3-3)
|
Infineon
|
| M470L6524BTU0-CLCC M470L3324BTU0-CLB3 M470L6524BTU |
RECTIFIER FAST-RECOVERY SINGLE 1A 50V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 1K/BULK
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die DDR SDRAM的缓冲模18 4针缓冲模块基12Mb乙芯
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-C |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| HY5DU121622BLTP-X HY5DU12822BLTP-X |
512Mb DDR SDRAM 产品512Mb DDR SDRAM
|
Hynix Semiconductor, Inc.
|
| K4H510838B-NC/LA2 K4H510838B-NC/LB0 K4H510838B-NC/ |
512Mb B-die DDR SDRAM Specification 54 sTSOP-II (400mil x 441mil) 512MB的乙芯片DDR SDRAM内存规格54 sTSOP -Ⅱ（400mil x 441mil
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
