PART |
Description |
Maker |
BD166 |
Plastic Medium Power Silicon PNP Transistor
|
Motorola Inc MOTOROLA[Motorola, Inc]
|
BD136-D |
Plastic Medium Power Silicon PNP Transistor
|
ON Semiconductor
|
BD439G BD435G |
Plastic Medium Power Silicon NPN Transistor
|
Rectron Semiconductor
|
MJE344-D |
Plastic NPN Silicon Medium-Power Transistor
|
ON Semiconductor
|
2N4920G 2N4918 2N4918_04 2N4919 2N4920 |
Medium-Power Plastic PNP Silicon Transistors
|
ONSEMI[ON Semiconductor]
|
MJE10B3 MJE1093PNP MJE2090 MJE2103 MJE2100 MJE2102 |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
|
MJE340-D |
Plastic Medium Power NPN Silicon Transistor
|
ON Semiconductor
|
TIP110-D |
Plastic Medium-Power Complementary Silicon Transistors
|
ON Semiconductor
|
MJE10B1 MJE1093 MJE2003 MJE1103 MJE1102 MJE2092 MJ |
PLASTIC MEDIUM-POWER COMPLEMENTARY SILICON TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
|
BD439 BD441 BD435 BD437 BD437G BD437T |
Plastic Medium Power Silicon NPN Transistor
|
ONSEMI[ON Semiconductor]
|
CSD882P CSD882R CSD882 CSD882E CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E 10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 Audio Frequency Power Amplifier and Low Speed Switching Applications
|
CDIL[Continental Device India Limited]
|