| PART |
Description |
Maker |
| IRF252 IRF253 IRF250 IRF254 IRF251 IRFP251 IRFP253 |
HIGH VOLTAGE POWER MOSFET DIE N-CHANNEL ENHANCEMENT MODE HIGH RUGGEDNESS SERIES
|
IXYS[IXYS Corporation]
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
| IXFN340N07 IXFN340N0704 |
HiPerFET?/a> Power MOSFETs Single Die MOSFET
HiPerFET⑩ Power MOSFETs Single Die MOSFET
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN230N1008 |
Power MOSFET Single Die MOSFET
|
IXYS Corporation
|
| IR2308 IR2308S |
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-pin DIP package
High Voltage and High Speed power MOSFET and IGBT Half Bridge Driver in a 8-lead SOIC package
|
International Rectifier
|
| IRFC240 |
HEXFET Power MOSFET Die
|
International Rectifier
|
| IXFN230N10 |
Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
| S2301 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| IXFX62N25 IXFK62N25 |
HiPerFET Power MOSFETs Single MOSFET Die
|
http://
IXYS[IXYS Corporation]
|
| IXFN90N30 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFN39N90NBSP IXFN39N90 |
HiPerFET Power MOSFETs Single MOSFET Die
|
IXYS[IXYS Corporation]
|
| IXFN340N06 |
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS[IXYS Corporation]
|
