| PART |
Description |
Maker |
| HVU200A |
29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?
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Hitachi,Ltd.
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| BB143 BB143115 |
5.3 pF, SILICON, VARIABLE CAPACITANCE DIODE
Low-voltage variable capacitance diode
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NXP SEMICONDUCTORS
PHILIPS[Philips Semiconductors]
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| HVD362 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
RENESAS[Renesas Electronics Corporation]
|
| HVU363B |
Diodes>Variable Capacitance
Variable Capacitance Diode for TV tuner
|
Renesas Electronics Corporation
|
| HVU17 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVU355B |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| HVU359 |
Diodes>Variable Capacitance
Variable Capacitance Diode for VCO
|
Renesas Electronics Corporation
|
| AHV8401 AHV9302A AHV8603 |
MF-HF BAND, 81.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
HF-VHF BAND, 110 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
MF-HF BAND, 255 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7
|
ADVANCED SEMICONDUCTOR INC
|
| BB512 Q62702-B479 |
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8 V)
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ?8 V)
From old datasheet system
Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 ˇ 8 V) 470 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 1N5455BCO 1N5468BCO 1N5443BCO 1N5695BCO 1N5444ACO |
82 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
22 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
10 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
12 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
100 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
27 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
47 pF, 45 V, SILICON, VARIABLE CAPACITANCE DIODE
47 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
15 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
6.8 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
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