| PART |
Description |
Maker |
| HMC478SC70 |
SiGe HBT GAIN BLOCK MMIC AMPLIFIE /DC - 4 GHz
|
Hittite Microwave Corporation
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| SST12LP10 SST12LP10-QVC SST12LP14A-QVCE-K SST12LP1 |
2.4 GHz High-Linearity Power Amplifier
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| ES0309-100 |
High Power Switch 0.1 GHz to 1 GHz
|
Micronetics, Inc.
|
| ES0313-10 |
High Power Switch 0.5 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0092 |
High Power Limiters 0.15 GHz to 0.45 GHz
|
Micronetics, Inc.
|
| EL0093 |
High Power Limiters 2 GHz to 4 GHz
|
Micronetics, Inc.
|
| EL0051 |
High Power Limiters 0.5 GHz to 2 GHz
|
Micronetics, Inc.
|
| PE6230 |
High Power 200 Watts RF Load Up To 3 GHz With N Male Input High Power Black Anodized Aluminum Heatsink
|
Pasternack Enterprises,...
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| INA-31063 INA-31063-TR1 |
DC-2.5 GHz 3 V, High Isolation Silicon RFIC Amplifier(直流.5 GHz 3 V,高隔离硅射频集成电路放大
3V Fixed Gain. High Isolation amplifier
的DC - 2.5 GHz3伏，高隔离硅射频放大器（直流.5 GHz3伏，高隔离硅射频集成电路放大器）
0 MHz - 2500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
Agilent(Hewlett-Packard)
AGILENT TECHNOLOGIES INC
|
