| PART |
Description |
Maker |
| PBHV8115Z |
1A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8115T |
150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9050T |
150mA PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9040T |
500 V, 0.25 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PMBTA44 |
400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9115Z |
150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV9050Z.115 |
500 V, 250 mA PNP high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS5140S PBSS4140S_1 PBSS4140S |
40 V low VCEsat PNP transistor
From old datasheet system
40 V low VCEsat NPN transistor
|
NXP Semiconductors
Philips Semiconductors
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 1N5524 1N5545 1N5519 1N5520 1N5521 1N5522 1N5523 1 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE
MSTBVA 2,5/13-G-5,08
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE LOW LEAKAGE
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
|
Electronic Theatre Controls, Inc.
Knox Semiconductor Inc
KNOX[Knox Semiconductor Inc]
KNOX[Knox Semiconductor, Inc]
|
| 2SC4854 2SC4854-5 2SC4854-4 |
晶体管|晶体管|叩| 6V的五（巴西）总裁| 15mA的一c）|36AB
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
Low-Voltage Low-Current High-Frequency Amp Applications
Low-Voltage, Low-Current High-Frequency Amp Applications
|
SANYO[Sanyo Semicon Device]
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
