PART |
Description |
Maker |
BBY58-03W Q62702-B912 |
Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) 18.3 pF, 10 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
AHV2000 AHV2004 AHV2011 AHV2002 AHV2003 AHV20 |
SILICON HYPERABRUPT TUNING VARACTOR UHF BAND, 6.05 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, DO-7 From old datasheet system
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
SMV1231-011 |
Hyperabrupt Tuning Varactors S BAND, 0.97 pF, 15 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Skyworks Solutions, Inc.
|
Q62702-B916 BBY58-02W BBY5802W |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
Siemens Group SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
BBY51-02W Q62702-B0858 BBY5102W |
Silicon Tuning Diode (High Q hyperabrupt tuning diode Low series inductance) 硅调谐二极管(高Q hyperabrupt调谐二极管低串联电感 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
BBY55-03W BBY5503W Q62702-B0911 |
From old datasheet system Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
|
SIEMENS[Siemens Semiconductor Group] Infineon Siemens Group
|
KV2101A |
SILICON HYPERABRUPT TUNING VARACTOR
|
Advanced Semiconductor, Inc.
|
KV2101 |
SILICON HYPERABRUPT TUNING VARACTOR
|
Advanced Semiconductor
|
BBY52-05W |
Silicon High Q Hyperabrupt Tuning Diode
|
Infineon
|
1N5468B 1N5466B 1N5475D 1N5475C 1N5462C 1N5463A 1N |
Diode VAR Cap Single 30V 22pF 2-Pin DO-7 Diode VAR Cap Single 30V 18pF 2-Pin DO-7 Diode VAR Cap Single 30V 82pF 2-Pin DO-7 Diode VAR Cap Single 30V 8.2pF 2-Pin DO-7 Diode VAR Cap Single 30V 10pF 2-Pin DO-7 Diode VAR Cap Single 30V 20pF 2-Pin DO-7 Diode VAR Cap Single 30V 100pF 2-Pin DO-7 Diode VAR Cap Single 30V 47pF 2-Pin DO-7 Diode VAR Cap Single 30V 6.8pF 2-Pin DO-7 Diode VAR Cap Single 30V 56pF 2-Pin DO-7
|
New Jersey Semiconductors
|