| PART |
Description |
Maker |
| DS1230YP-70IND DS1230Y-120IND DS1230Y-200IND DS123 |
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA28
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA28
256k Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28
|
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| AS7C33256PFS18B AS7C33256PFS18BV.1.7 AS7C33256PFS1 |
3.3V 256K X 18 pipeline burst synchronous SRAM 3.3 256 × 18管道爆裂同步SRAM
3.3V 256K X 18 pipeline burst synchronous SRAM 256K X 18 STANDARD SRAM, 8 ns, PQFP100
Sync SRAM - 3.3V
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| DPS96122-100I DPS96122-85I DPS96122-150I |
256K X 16 MULTI DEVICE SRAM MODULE, 100 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 85 ns, DMA68
256K X 16 MULTI DEVICE SRAM MODULE, 150 ns, DMA68
|
|
| EMS256K8BMO2-55M EMS256K8BMO2-55D EMS256K8BMO6-55I |
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, CDMA32
256K X 8 MULTI DEVICE SRAM MODULE, 55 ns, PDMA32
|
OKI SEMICONDUCTOR CO., LTD.
|
| DS1249Y-85IND |
2048k Nonvolatile SRAM 256K X 8 NON-VOLATILE SRAM MODULE, 85 ns, PDIP32
|
Maxim Integrated Products, Inc.
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| CY7C1355A-117BGC CY7C1355A-117BGI CY7C1357A-100AC |
256K x 36/512K x 18 Synchronous Flow-Thru SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
| CY7C1368C-200AJXI CY7C1368C-200AXC |
9-Mbit (256K x 32) Pipelined DCD Sync SRAM 256K X 32 CACHE SRAM, 3 ns, PQFP100
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| SYS32256ZK-12 SYS32256ZK-15 SYS32256ZK-17 SYS32256 |
256K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PZMA64 PLASTIC, ZIP-64
256K X 32 MULTI DEVICE SRAM MODULE, 12 ns, PZMA64 PLASTIC, ZIP-64
256K X 32 MULTI DEVICE SRAM MODULE, 15 ns, PZMA64 PLASTIC, ZIP-64
256K x 32 SRAM MODULE
|
MOSAIC
|
