PART |
Description |
Maker |
M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M58PV001LE96ZB5 M58PR001LE M58PR001LE96ZB5 M58PR25 |
256-Mbit, 512-Mbit or 1-Gbit (× 16, multiple bank, multilevel, burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M36L0R8060T0 M36L0R8060B0 M36L0R8060 |
256 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 64 Mbit (Burst) PSRAM 256 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
M36L0R7040B0 M36L0R7040B0ZAQE M36L0R7040B0ZAQF M36 |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory and 16 Mbit PSRAM, 1.8V Supply, Multi-Chip Package
|
ST Microelectronics STMicroelectronics
|
M36L0R7050L1ZAMF M36L0R7060U1 M36L0R7060U1ZAME M36 |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package
|
STMicroelectronics
|
M58LR128HT85ZB5E M58LR128HT85ZB5F |
128 Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
M29DW128G60NF6E M29DW128G60NF6F M29DW128G60ZA6E M2 |
128 Mbit (8 Mb x 16, multiple bank, page, dual boot) 3 V supply Flash memory
|
Numonyx B.V
|
M39P0R9070E0ZADF M39P0R9070E0 M39P0R9070E0ZAD M39P |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
STMICROELECTRONICS[STMicroelectronics]
|
M58LR128F-ZB M58LR128F-ZBE M58LR128F-ZBF M58LR128F |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
STMicroelectronics
|
M30L0R8000B0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST
|
M29DW128F M29DW128F70NF1 M29DW128F70NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
Numonyx B.V
|
M36L0R7050L1ZAMF M36L0R7050L1ZAME M36L0R7060U1ZAMF |
128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体264兆移动存储芯片,1.8V电源多芯片封 128 Mbit (Mux I/O, Multiple Bank, Multi-Level, Burst) Flash memory, 32 or 64 Mbit PSRAM, 1.8V supply Multi-Chip Package 128兆位(复用的I / O,多银行,多层次,多突发)快闪记忆体24兆移动存储芯片,1.8V电源多芯片封
|
意法半导 STMicroelectronics N.V.
|