| PART |
Description |
Maker |
| FDD10AN06A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 60V, 50A, 0.0105 Ohms @ VGS = 10V, TO-252/DPAK Package
|
FAIRCHILD SEMICONDUCTOR CORP
|
| AUIRG4BC30U-S |
600V Automotive UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier
|
| FDD16AN08A0 FDD16AN08A0NL |
Discrete Automotive N-Channel UltraFET Trench MOSFET, 75V, 50A, 0.016 Ohms @ VGS = 10V, TO-252/DPAK Package 9 A, 75 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
N-Channel UltraFET Trench MOSFET 75V/ 50A/ 16m
N-Channel UltraFET ?Trench MOSFET 75V, 50A, 16mOhm
N-Channel UltraFET Trench MOSFET 75V, 50A, 16mз
N-Channel UltraFET Trench MOSFET 75V, 50A, 16m?/a>
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IDT7025L55G IDT7025S IDT7025S17PFB IDT7025L17PFB I |
HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM
Discrete Automotive N-Channel PowerTrench MOSFET, 60V, 80A, 5mOhms, TO-263AB; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel
280V N-Channel MOSFET; ; No of Pins: 3; Container: Rail 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
250V N-Channel MOSFET; ; No of Pins: 3; Container: Rail 8K X 16 DUAL-PORT SRAM, 25 ns, PQFP100
|
Integrated Device Techn...
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technolog...
|
| IXTH30N50 |
MegaMOS FET 30 A, 500 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Discrete MOSFETs: Standard N-channel Types
|
IXYS, Corp.
IXYS Corporation
|
| AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging
1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging
1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging
1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging
1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging
10-Bit D-Type Latch
600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器
8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
| DD-03296 |
96-Channel Discrete to Digital Interface
|
DDC
|
| CMLM0205 |
MULTI DISCRETE MODULESURFACE MOUNT N-CHANNEL MOSFET AND LOW VF SILICON SCHOTTKY DIODE 280 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| IXTQ62N15P |
Discrete MOSFETs: Standard N-channel Types
|
IXYS
|
| IXTQ170N10P |
Discrete MOSFETs: Standard N-channel Types
|
IXYS
|
|
